SIC OpenIR
Resonant level-induced high thermoelectric response in indium-doped GeTe
Wu, Lihua1; Li, Xin1,2; Wang, Shanyu3; Zhang, Tiansong4; Yang, Jiong1; Zhang, Wenqing1; Chen, Lidong4; Yang, Jihui3
2017
发表期刊NPG Asia Materials
ISSN18844049
卷号9期号:1
摘要Resonant levels are promising for high-performance single-phase thermoelectric materials. Recently, phase-change materials have attracted much attention for energy conversion applications. As the energetic position of resonant levels could be temperature dependent, searching for dopants in phase-change materials, which can introduce resonant levels in both low and high temperature phases, remains challenging. In this study, possible distortions of the electronic density of states due to group IIIA elements (Ga, In, Tl) in GeTe are theoretically investigated. Resonant levels induced by indium dopants in both rhombohedral and cubic phase GeTe have been demonstrated. The experimental Seebeck coefficients of InxGe1 - xTe exhibit a large enhancement compared with those observed for other prior dopants. Indium dopants reduce the defect concentrations in GeTe, and thus, they lower the carrier concentrations and suppress the electronic component of the total thermal conductivity. The enhanced Seebeck coefficient, together with the suppressed thermal conductivity, leads to a reasonably high ZT of 1.3 at a temperature near 355 °C in In0.02Ge0.98Te. The corresponding average ZT is enhanced by 70% across the entire temperature range of the rhombohedral and cubic phases. These observations indicate that indium-doped GeTe is a promising base material for achieving an even higher thermoelectric performance. © The Author(s) 2017.
DOI10.1038/am.2016.203
EI入藏号20175204577350
EI主题词Germanium compounds
EI分类号525.5 Energy Conversion Issues - 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 615.4 Thermoelectric Energy - 641.1 Thermodynamics - 701.1 Electricity: Basic Concepts and Phenomena - 708.3 Superconducting Materials - 931.2 Physical Properties of Gases, Liquids and Solids
引用统计
文献类型期刊论文
条目标识符http://ir.sic.ac.cn/handle/331005/25468
专题中国科学院上海硅酸盐研究所
作者单位1.Materials Genome Institute, Shanghai University, 99 Shangda Road, E-433, Shanghai; 200444, China;
2.Department of Physics, College of Sciences, Shanghai University, Shanghai, China;
3.Department of Materials Science and Engineering, University of Washington, 315 Roberts Hall, Box 352120, Seattle; WA; 98195, United States;
4.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
推荐引用方式
GB/T 7714
Wu, Lihua,Li, Xin,Wang, Shanyu,et al. Resonant level-induced high thermoelectric response in indium-doped GeTe[J]. NPG Asia Materials,2017,9(1).
APA Wu, Lihua.,Li, Xin.,Wang, Shanyu.,Zhang, Tiansong.,Yang, Jiong.,...&Yang, Jihui.(2017).Resonant level-induced high thermoelectric response in indium-doped GeTe.NPG Asia Materials,9(1).
MLA Wu, Lihua,et al."Resonant level-induced high thermoelectric response in indium-doped GeTe".NPG Asia Materials 9.1(2017).
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Wu, Lihua]的文章
[Li, Xin]的文章
[Wang, Shanyu]的文章
百度学术
百度学术中相似的文章
[Wu, Lihua]的文章
[Li, Xin]的文章
[Wang, Shanyu]的文章
必应学术
必应学术中相似的文章
[Wu, Lihua]的文章
[Li, Xin]的文章
[Wang, Shanyu]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。