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Enhanced interfacial electron transfer of inverted perovskite solar cells by introduction of CoSe into the electron-transporting-layer
Chen, Shanshan1; Yang, Songwang2; Sun, Hong1; Zhang, Lu1; Peng, Jiajun3; Liang, Ziqi3; Wang, Zhong-Sheng1
2017
发表期刊Journal of Power Sources
ISSN03787753
卷号353页码:123-130
摘要To improve the electron transfer at the interface between the perovskite film and the electron-transporting-material (ETM) layer, CoSe doped [6,6]-phenyl C61-butyric acid methyl ester (PCBM) is employed as the ETM layer for the inverted planar perovskite solar cell with NiO as the hole-transporting-material layer. Introduction of CoSe (5.8 wt%) into the PCBM layer improves the conductivity of the ETM layer and decreases the photoluminescence intensity, thus enhancing the interfacial electron extraction and reducing the electron transfer resistance at the perovskite/ETM interface. As a consequence, the power conversion efficiency is enhanced from 11.43% to 14.91% by 30% due to the noted increases in short-circuit current density from 17.95 mA cm−2to 19.85 mA cm−2and fill factor from 0.60 to 0.70. This work provides a new strategy to improve the performance of inverted perovskite solar cells. © 2017
DOI10.1016/j.jpowsour.2017.03.144
EI入藏号20171503549691
EI主题词Perovskite solar cells
EI分类号482.2 Minerals - 701.1 Electricity: Basic Concepts and Phenomena - 702.3 Solar Cells - 712.1 Semiconducting Materials - 802.2 Chemical Reactions - 804.1 Organic Compounds - 804.2 Inorganic Compounds - 951 Materials Science
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sic.ac.cn/handle/331005/25411
专题中国科学院上海硅酸盐研究所
作者单位1.Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Lab of Advanced Materials, Collaborative Innovation Center of Chemistry for Energy Materials (2011-iChEM), Fudan University, 2205 Songhu Road, Shanghai; 200438, China;
2.CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 588 Heshuo Road, Shanghai; 201899, China;
3.Department of Materials Science, Fudan University, 220 Handan Road, Shanghai; 20433, China
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GB/T 7714
Chen, Shanshan,Yang, Songwang,Sun, Hong,et al. Enhanced interfacial electron transfer of inverted perovskite solar cells by introduction of CoSe into the electron-transporting-layer[J]. Journal of Power Sources,2017,353:123-130.
APA Chen, Shanshan.,Yang, Songwang.,Sun, Hong.,Zhang, Lu.,Peng, Jiajun.,...&Wang, Zhong-Sheng.(2017).Enhanced interfacial electron transfer of inverted perovskite solar cells by introduction of CoSe into the electron-transporting-layer.Journal of Power Sources,353,123-130.
MLA Chen, Shanshan,et al."Enhanced interfacial electron transfer of inverted perovskite solar cells by introduction of CoSe into the electron-transporting-layer".Journal of Power Sources 353(2017):123-130.
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